Overview
The present invention relates to a silicon based gas and vapor sensor and a method of fabrication thereof comprising modified textured silicon as substrate and sensing element for the detection of various gases/vapors having electron donating or withdrawing tendency for room temperature applications. The modified textured multi-crystalline silicon wafer acts as gas and vapor sensor element at room temperature and its resistance changes upon exposure to different analyte molecules. The resistance of the sensor increases when exposed to the gases having electron-donating tendency such as but not limited to ammonia, where as the resistance decreases when exposed to the gases with electron-withdrawing nature, such as but not limited to nitrous oxide etc.