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Non magnetic elements doped semiconducting metal oxide materials and its utilization in organic electronics

by IPR Cell


The present invention relates to non-magnetic impurities induced semiconducting metal oxide materials for introducing controlled ferromagnetism in the semiconductor material and its utilization in organic light emitting devises (OLEDs) as well as organic photovoltaic cells (OPV). Semiconducting metal oxide materials such as but not limited to TiO2 are prepared using non magnetic elements preferably Li or Mg by eventually introducing carriers in the material by doping.



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